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1 cgh40006s 6 w, rf power gan hemt, plastic crees cgh40006s is an unmatched, gallium nitride (gan) high electron mobility transistor (hemt). the cgh40006s, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of rf and microwave applications. gan hemts offer high effciency, high gain and wide bandwidth capabilities making the cgh40006s ideal for linear and compressed amplifer circuits. the transistor is available in a 3mm x 3mm, surface mount, quad-fat-no-lead (qfn) package. r e v 3 . 0 C m a y 2 0 1 5 features ? up to 6 ghz operation ? 13 db small signal gain at 2.0 ghz ? 11 db small signal gain at 6.0 ghz ? 8 w typical at p in = 32 dbm ? 65 % effciency at p in = 32 dbm ? 28 v operation ? 3mm x 3mm package applications ? 2-way private radio ? broadband amplifers ? cellular infrastructure ? test instrumentation ? class a, ab, linear amplifers suitable for ofdm, w-cdma, edge, cdma waveforms package types: 440203 pns: cgh40006s subject to change without notice. www.cree.com/wireless
2 absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units conditions (vemr7svgispei v dss 84 volts eis7svgispei v gs volts storage temperature t stg operating junction temperature t j 175 maximum forward gate current i 1% 2.1 % maximum drain current 1 i (1% 0.75 % soldering temperature 2 t s 260 thermal resistance, junction to case r jc 10.1 case operating temperature t c 2si 1 current limit for long term, reliable operation 2 6ijivsi%ttpmgemsr2sisrwsphivmre gviigs6(sgir0mfvev measured for the cgh40006s at p diss = 8 w. 4 t c ewi itivevi jsv i himgi vijivw s i itivevi e i vsrh ef rhivrie i tegoei 8i 4 mpp ehh ehhmmsrep ivep viwmwergi8i68,jsvviimwhisrwvemsretpmiv,7%14mmpmespiwhiwmrihsrempmgo6sivw4mw 8isep6jvsiiewmrosinrgmsrmw electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) v dc v ds = 10 v, i d % ei5miwgirspei v 75 C C v dc v ds = 28 v, i d % saturated drain current i ds 1.7 2.1 C % v ds = 6.0 v, v gs = 2.0 v (vemr7svgivieohsrspei v 6 120 C C v dc v gs d % rf characteristics 2 (t c = 25 ? c, f 0 = 5.8 ghz unless otherwise noted) small signal gain g ss 10 11.8 C h v dd = 28 v, i (5 % power output at p in h p out 5 6.9 C w v dd = 28 v, i (5 % (vemr)jgmirg 40 C % v dd = 28 v, i (5 % p in h output mismatch stress vswr C C y no damage at all phase angles, v dd = 28 v, i (5 % p in h dynamic characteristics input capacitance c gs C 2.7 C pf v ds = 28 v, v gs j1, output capacitance c ds C 0.8 C pf v ds = 28 v, v gs j1, iihfegoetegmergi c gd C 0.1 C pf v ds = 28 v, v gs j1, 2siw 1 1iewvihsrejivtvmsvstegoemr 2 1iewvihmrviimwrevvsferhtvshgmsriwvi%(8mwvimwhiwmrihjsvmspiiwe,erherswsijpp getefmpmsjihimgihiswsvgimrhgergierhiveptivjsvergi8ihisrwvemsretpmiv,7%14mwefiivmrhmgesvsji true rf performance of the device. (vemr)jgmirg4 out 4 dc cgh40006s rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 typical performance small signal gain vs frequency at 28 v of the cgh40006s in the cgh40006s-amp1 input & output return losses vs frequency at 28 v of the cgh40006s in the cgh40006s-amp1 10 12 14 16 gai n ( d b ) s-parameter 0 2 4 6 8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 gai n ( d b ) frequency (ghz) cgh40006s - s21 - 12 -10 -8 -6 -4 -2 0 gai n ( d b ) s-parameter -26 -24 -22 -20 -18 -16 -14 - 12 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 gai n ( d b ) frequency (ghz) cgh40006s - s11 cgh40006s - s22 cgh40006s rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 typical performance power gain vs output power as a function of frequency of the cgh40006s in the cgh40006s-amp1 v dd = 28 v, i dq = 100 ma drain effciency vs output power as a function of frequency of the cgh40006s in the cgh40006s-amp1 v dd = 28 v, i dq = 100 ma 12 14 16 18 20 gai n ( d b ) gain vs. pout 2.0 ghz 3.0 ghz 4.0 ghz 5.0 ghz 6.0 ghz 0 2 4 6 8 10 20 22 24 26 28 30 32 34 36 38 40 gai n ( d b ) output power (dbm) 40% 50% 60% 70% d r ai n ef f i ci en cy eff vs output power 2.0 ghz 3.0 ghz 4.0 ghz 5.0 ghz 6.0 ghz 0% 10% 20% 30% 20 22 24 26 28 30 32 34 36 38 40 d r ai n ef f i ci en cy output power (dbm) cgh40006s rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 typical performance power gain vs input power as a function of frequency of the cgh40006s in the cgh40006s-amp1 v dd = 28 v, i dq = 100 ma drain effciency vs input power as a function of frequency of the cgh40006s in the cgh40006s-amp1 v dd = 28 v, i dq = 100 ma 8 10 12 14 gai n ( d b ) gain vs input power 0 2 4 6 10 12 14 16 18 20 22 24 26 28 30 32 34 gai n ( d b ) input power (dbm) 2.0 ghz 3.0 ghz 4.0 ghz 5.0 ghz 6.0 ghz 60% 70% 80% 90% 100% d r ai n ef f i ci en cy drain efficiency vs. pin 2.0 ghz 3.0 ghz 4.0 ghz 5.0 ghz 6.0 ghz 0% 10% 20% 30% 40% 50% 10 12 14 16 18 20 22 24 26 28 30 32 34 d r ai n ef f i ci en cy input power (dbm) cgh40006s rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 typical performance power gain vs frequency of the cgh40006s in the cgh40006s-amp1 at p in = 32 dbm, v dd = 28 v output power vs frequency of the cgh40006s in the cgh40006s-amp1 at p in = 32 dbm, v dd = 28 v drain effciency vs frequency of the cgh40006s in the cgh40006s-amp1 at p in = 32 dbm, v dd = 28 v 6 7 8 9 10 gai n ( d b ) gain @ pin 32 dbm 0 1 2 3 4 5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 gai n ( d b ) frequency (ghz) 8 10 12 ou t p u t po w er ( w ) power (w) @ pin 32 dbm 0 2 4 6 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 ou t p u t po w er ( w ) frequency (ghz) 40% 50% 60% 70% d r ai n ef f i ci en cy drain efficiency @ pin 32 dbm 0% 10% 20% 30% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 d r ai n ef f i ci en cy frequency (ghz) cgh40006s rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 typical performance third order intermodulation distortion vs average output power as a function of frequency of the cgh40006s in the cgh40006s-amp1 v dd = 28 v, i dq = 60 ma electrostatic discharge (esd) classifcations parameter symbol class test methodology ,qersh1ship ,1 .)().)7(( charge device model cdm 2 (125 v to 250 v) .)().)7( moisture sensitivity level (msl) classifcation parameter symbol level test methodology 1smwvi7irwmmzm0izip 170 lsvw 4.)().78( 20 10 0 i m 3 ( d b c) im3 vs total outut ower 2.0 ghz 3.0 ghz 4.0 ghz 5.0 ghz 6.0 ghz 60 50 40 30 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 i m 3 ( d b c) outut power (dbm) cgh40006s rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 typical performance simulated maximum available gain and k factor of the cgh40006s v dd = 28 v, i dq = 100 ma 2si3reqmplmgo4 typical noise performance simulated minimum noise figure and noise resistance vs frequency of the cgh40006s v dd = 28 v, i dq = 100 ma 2si3reqmplmgo4 minimum noise figure (db) noise resistance (ohms) mag (db) k factor cgh40006s rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 cgh40006s cw power dissipation de-rating curve note 1. area exceeds maximum case operating temperature (see page 2). source and load impedances frequency (mhz) z source z load 1000 n n 2000 n n n n 4000 n n 5000 n n 6000 n n note 1. v dd = 28v, i (5 %mritegoei note 2. optimized for power gain, p 7%8 erh4%) 2siirwmrmwhimgiepsjviuirgwivmiwviwmwsvwwsphfiwihs emremretpmivwefmpm 2sit,wsvgimrhgergimwewwihfiiiritegoeierh6vsrh mpmgo4 d z source z load g s note 1 cgh40006s rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
10 cgh40006s-amp1 demonstration amplifer circuit bill of materials designator description qty r1 6)7%2wspivergi 1 r2 6)7%2wspivergi 1 6 6)7%2wspivergi 1 c1 %4tt%87 1 c2 %4tt%87 1 c10 %4tt%87 1 c4,c11 %4t%87 2 %4t 2 c7,c14 %4t)66 2 c8 %4j7188%28%091 1 c15 %4)66 1 c16 %4)0)871( 1 .. 2271%7864%2)0.%6)4 2 j1 ,)%()66840)2047 1 468, 1 5 cgh40006s 1 cgh40006s-amp1 demonstration amplifer circuit cgh40006s rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
11 cgh40006s-amp1 demonstration amplifer circuit schematic cgh40006s-amp1 demonstration amplifer circuit outline cgh40006s rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
12 typical package s-parameters for cgh40006s (small signal, v ds = 28 v, i dq = 100 ma, angle in degrees) frequency mag s11 ang s11 mag s21 ang s21 mag s12 ang s12 mag s22 ang s22 500 mhz 18.74 125.47 0.024 0.459 600 mhz 0.922 16.89 118.64 0.026 0.428 700 mhz 0.912 15.28 112.75 0.028 0.402 800 mhz 0.905 107.61 0.029 21.71 900 mhz 0.899 12.70 17.68 1.0 ghz 0.894 11.67 98.96 14.11 1.1 ghz 0.891 10.77 10.91 1.2 ghz 0.888 9.99 91.80 8.00 , 0.886 88.61 1.4 ghz 0.884 8.71 85.61 2.88 1.5 ghz 8.17 82.77 0.58 1.6 ghz 0.881 7.69 80.07 1.7 ghz 0.881 7.26 77.49 1.8 ghz 0.880 6.88 75.00 1.9 ghz 0.879 72.60 2.0 ghz 0.879 6.21 70.26 2.1 ghz 0.879 5.92 68.00 2.2 ghz 0.879 5.65 65.79 , 0.879 5.40 2.4 ghz 0.879 5.18 61.51 2.5 ghz 0.879 4.97 2.6 ghz 0.879 178.20 4.77 0.029 2.7 ghz 0.879 176.44 4.59 0.029 2.8 ghz 0.879 174.74 4.42 0.029 2.9 ghz 0.879 4.26 0.029 , 0.880 171.49 4.11 49.50 0.028 , 0.880 45.70 0.028 , 0.881 41.97 0.027 , 0.882 162.57 0.026 , 159.81 0.025 0.410 4.0 ghz 0.884 0.025 0.422 4.2 ghz 0.885 154.52 2.85 27.65 0.024 4.4 ghz 0.887 151.96 2.71 24.19 0.445 4.6 ghz 0.888 149.45 2.57 20.77 0.022 0.457 4.8 ghz 0.889 146.98 2.45 0.022 0.468 5.0 ghz 0.890 144.55 0.021 0.480 5.2 ghz 0.892 142.15 10.71 0.020 0.491 5.4 ghz 7.41 0.019 5.6 ghz 0.894 2.04 4.15 0.018 0.514 5.8 ghz 0.896 1.95 0.91 0.018 0.525 6.0 ghz 0.897 1.87 0.017 8shsrpsehiwteveiivwmrwtjsvessi cgh40006s 4vshg4eierhgpmgosrihsgiremsref 2sirempmgo4 cgh40006s rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
13 product dimensions cgh40006s (package type 440203) pin input/output 1 gnd 2 rf in gnd 4 gnd 5 rf out 6 gnd cgh40006s rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
14 tape & reel dimensions cgh40006s rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
15 product ordering information order number description unit of measure cgh40006s gan hemt each 7%14 test board with gan hemt installed each ,786 delivered in tape and reel tevwviip cgh40006s rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
16 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing & export cree, rf components 1.919.407.5302 ryan baker marketing cree, wireless devices 1.919.407.7816 tom dekker sales director cree, wireless devices 1.919.407.5639 cgh40006s rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2010-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.

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